ZXM61P03F
30V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V (BR)DSS =-30V; R DS(ON) =0.35 ; I D =-1.1A
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
? Low on-resistance
? Fast switching speed
? Low threshold
? Low gate drive
? SOT23 package
APPLICATIONS
? DC - DC converters
? Power management functions
? Disconnect switches
? Motor control
ORDERING INFORMATION
SOT23
DEVICE
ZXM61P03FTA
ZXM61P03FTC
REEL SIZE
(inches)
7
13
TAPE WIDTH
(mm)
8 embossed
8 embossed
QUANTITY
PER REEL
3,000
10,000
Pin out
DEVICE MARKING
P03
Top view
ISSUE 1 - OCTOBER 2005
1
SEMICONDUCTORS
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相关代理商/技术参数
ZXM62N02E6 制造商:Diodes Incorporated 功能描述: 制造商:Diodes Incorporated 功能描述:MOSFET N SOT-23-6
ZXM62N02E6_04 制造商:ZETEX 制造商全称:ZETEX 功能描述:20V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXM62N02E6TA 功能描述:MOSFET 20V N-Chnl HDMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZXM62N02E6TC 功能描述:MOSFET 20V N Chnl HDMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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ZXM62N03E6_04 制造商:ZETEX 制造商全称:ZETEX 功能描述:30V N-CHANNEL ENHANCEMENTMODEMOSFET
ZXM62N03E6TA 功能描述:MOSFET 30V N-Chnl HDMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZXM62N03E6TC 功能描述:MOSFET 30V N Chnl HDMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube